Al组分对AlGaN/GaN量子级联激光器性能的影响

Effect of Al Composition on the Properties of GaN-based Quantum Cascade Laser

通过对激光器一个周期单元的一维薛定谔方程与泊松方程进行自洽求解,得到了能带与电子波函数的分布情况,并且计算了在近共振条件下偶极跃迁元与垒层Al组分的关系,得到了Al组分的优化结果。结果表明,垒层材料的Al组分大约等于0.15时激光器的偶极跃迁元最大,此时激光器处于垂直跃迁工作状态。

In order to optimize the Al composition of the barrier in GaN-based quantum cascade laser, we made a self-consistent calculation to the Schrodinger and Poisson equations of one period of barrier in QCL. The band structure and the electron envelope function were obtained. The relation between dipole matrix element and Al composition of the barrier was illuminated. The results showed that the dipole matrix element is the largest for the optimized Al composition to be 0.15.