摘要
用L-K有效质量理论研究[001]方向生长的(Znse)n/(ZnS)m应变层超晶格的电子结构和光吸收系数.结果表明,光吸收系数与附宽和垒厚有关.
The subband structures and optical absorption coefficient of (ZnSe)_n/(ZnS)_m strained-lay superlattices in [001] were calculated with the effective-mass approximation. The results indicate that the optical obsorption coefficient varies with the well-width and the barrier-width.
出处
《吉林大学自然科学学报》
CAS
CSCD
1998年第3期68-71,共4页
Acta Scientiarum Naturalium Universitatis Jilinensis
关键词
应变层超晶格
亚带结构
光吸收系数
半导体
strained-lay superlattices, subband structures, optical obsorption coefficient