6H-SiC JFET高温解析模型

The Analytical Model of 6H-SiC JFET for a Wide Range of Temperature

本文报道了一个在较宽温度范围内能精确描述6HSiCJEFT性能（包括亚阈区）的器件模型，器件的电流电压特性由包含少数几个物理模型参数连续统一的解析表达式表述该模型也包括了串联电阻效应、沟道中电子速度饱和效应、饱和区的有限输出电导、温度决定的模型参数等效应载流子的计算考虑了SiC中杂质能级特点，采用两级电离模型，模拟了典型结构器件的高温特性。

The model which accurately reproduces both above threshold and subthreshold characteristics of channel 6H SiC JEFT in a wide temperature range, from 200k to 1000k is reported. The current-voltage characteristics are described by a single continuous analytical expression for all regions of operation. The physicsbased model includes effects such as velocity saturation in the channel, finite output conductance in sattiration, series source and drain resistance, and temperature dependent model parameters. The carrier concentration is calulated based on a twcrlevel ionization model, and the simulated resuhs are in good agreement with measured data.