碳化硅半导体技术新进展

The recent progress of silicon carbide semiconductor technology

介绍了ＳｉＣ材料的生长及器件制备技术，分析了目前ＳｉＣ器件及集成电路等方面的研究现状，并讨论了存在的各种问题．

The Silicon carbide is expected to be a useful material which functions at extreme hightemperatures, and highfrequencies and in the highradiation environment because of its unique ability. Some obstacles of SiC crystal growth and device fabrication processes prevent development and application of SiC devices and integrated circuits. This paper introduces the growth of crystal SiC and device processes, surveys the present status of SiCbased semiconductor electronic devices and integrated circuits. In addition, the prospects for resolving the obstacles are discussed.