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基于倾斜AlN薄膜的体声波质量传感器的制备及性能分析 被引量：2

Fabrication and Characteristic Analysis of Bulk Wave Mass Sensor Based on Inclined AlN Film
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摘要 提出通过改变溅射气压获得倾斜于C轴的AlN薄膜的制备方法,探讨了倾斜AlN薄膜的生长机理。以3对交替沉积的Ti—Mo金属层为布拉格声学反射层,采用MEMS工艺制备了基于倾斜AlN薄膜的、以剪切模式振动的体声波液体传感器,并对器件的S11参数进行测试分析,得到传感器的中心频率为0.78GHz,表明该器件在生物液相检测领域具有一定的应用前景。 C-axis inclined A1N films were prepared by changing the sputtering pressure and the mechanism of the c-axis inclined AIN films was discussed. The Ti-Mo alternative six layers were applied as Bragg reflector in thin film bulk acoustic wave resonator. The shear mode liquid sensor based on c-axis inclined AlN film was implemented adopting MEMS process and the characteristic of the device was tested. The sensor shows resonance frequency of 0. 78GHz and good application prospect.
作者 熊娟 顾豪爽 吴雯 杜鹏飞 胡明哲
机构地区 湖北大学物理学与电子技术学院
出处 《传感技术学报》 CAS CSCD 北大核心 2009年第8期1114-1116,共3页 Chinese Journal of Sensors and Actuators
基金 国家自然科学基金项目资助(50872031) 湖北省自然科学基金重点项目资助(2008CDA018)
关键词 质量传感器 倾斜AlN薄膜 磁控溅射 剪切振动 mass sensor inclined AlN film magnetic sputtering shear mode
分类号 TN405 [电子电信—微电子学与固体电子学]
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参考文献8

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同被引文献26

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传感技术学报
2009年 第8期

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