期刊文献+

带有过温保护功能的1W白光LED驱动电路设计 被引量:6

Design of a 1W White LED Constant-Current Driver with Thermal-Shutdown Function
下载PDF
导出
摘要 基于CSMC5V0.6μm标准CMOS工艺设计研制了一种具有过温保护功能的1 W温度传感LED恒流驱动电路。该电路由恒流驱动模块和温度传感模块组成,在电源电压为5V时能提供350 mA恒定驱动电流,并能在设定温度下关断功率MOS管,实现过温保护功能。恒流驱动模块采用比例电流采样方式,在电源电压正负变化10%范围内,驱动电流变化小于4.3%,温度传感模块利用PTAT(与绝对温度成正比)电压与基准电压比较,产生关断信号,关断温度在50℃—125℃范围内可由外接电阻设定。该芯片实现了温度传感模块和白光LED恒流驱动模块的单片集成,在LED照明技术中有一定的应用价值。 A 1 W white LED constant-current driver with thermal-shutdown function is designed and fabricated with 0. 6μm standard CMOS process provided by CSMC. It consists of constant-current driver module and temperature-sensor module. The circuit can provide constant 350 mA current with 5 V supply voltage and turn off the MOSFET when the chip's temperature is higher than the setting temperature. The constant-current driver module samples the current proportional to driving current to control the circuit. The output driving current changes less than 4. 3 % when supply voltage varies ±10 %. Temperature-sensor module compares the PTAT (Proportional To Absolute Temperature) voltage with reference voltage to general shutdown signal and turn off the circuit at setting temperature fixed by exterior resistor over the rage of 50 ℃-125 ℃. The chip is integrated the constant-current driver with temperature-sensor module and is valuable in LED lighting applications.
出处 《传感技术学报》 CAS CSCD 北大核心 2009年第8期1217-1220,共4页 Chinese Journal of Sensors and Actuators
基金 浙江省科学技术厅科技计划项目高效节能技术专项资助(2006C11007)
关键词 温度传感 过温保护 白光照明LED温度传感LED恒流驱动 temperature-sensor thermal-shutdown power white LED constant-current driving with temperature-sensor
  • 相关文献

参考文献5

二级参考文献18

  • 1ICL7136 Low-Power[R].3 1/2 Digit A/D Converter Complete Data Sheet,MAXIM,1996-09-01Rev 2:1-8.
  • 2单成祥.传感器的理论与设计基础及其应用(第1版)[M].国防工业出版社,1988年8月.400-402.
  • 3Notaro B A.Simple Short-Circuit Protection for Voltage regulators[J].IEEE Circuit & Devices,1994,10(2):41.
  • 4Manku T,Wang Y.Temperature Independent Output Voltage Generated by the Threshold Voltage of NMOS Transistor[J],IEEE,Electron Lett,1995,31:935-936.
  • 5Dawes W H.The Design of a Family of High-Current Swithches with over-current and over-temperature protection[J].IEEE Transaction on Instrumentation and Measurement,1998,47(12):1492-1502.
  • 6Arabi K Kaminska B.Built-in Temperature Sensors for On-Line Thermal Monitoring of Microelectronic Structures[C].In:IEEE International Conference,1997,Pages:462-467.
  • 7Meijer G C M,Wang G J,Fruett F.Temperature Sensor and Voltage References Implemented in CMOS Technology[J].IEEE Sensors J,2001,1(3):225-234.
  • 8Nagel MH; Fonderie MJ,Meijer GCM,Huijsing JH.Integrated 1 V Thermal Shutdown Circuit[J].IEEE,Electronics Letters,7 May 1992,28 (10):969-970.
  • 9P.E.艾伦,D.R.霍尔伯格..CMOS模拟电路设计[M]..北京:科学出版社,,1995..120-123..
  • 10Lee Chia-Ming,Chuo Chang-Cheng,Chen I-Ling.High-brightness inverted InGaN-GaN multiplequantum-well light-emitting diodes without a transparent conductive layer[J].IEEE Electron Device Letters,2003; 24 (3):156-158

共引文献48

同被引文献53

引证文献6

二级引证文献15

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部