期刊文献+

一种双波段MEMS低噪声放大器设计

A novel dual-band MEMS LNA design
下载PDF
导出
摘要 本文利用一种MEMS电容式开关并联实现双波段2.1GHz/4.6GHz微机械低噪声放大器。根据MEMS电容开关的电容特性,实现LNA电路匹配阻抗的变化、在不同的波段实现谐振匹配,从而实现双波段分别放大的功能。首先提出一种电容式开关的设计,理论、仿真分析了开关的特性,开关在2.21GHz和4.8GHz具有良好的插入损耗和隔离度、插损为2.2dB左右,隔离度达到30dB以上。其次将开关引入于基于Cascode放大管的LNA电路中、和CMOS电路具有很好的兼容性,设计了LNA的电路模型和仿真分析、分析结果表明,在频率为2.21GHz时、增益达到11.4dB,4.8GHz时、增益达12.5dB,二波段隔离度在30dB以上、噪声在4.1dB左右,该研究方法和设计克服了普通双波段LNA需要两路单独电路的缺点,该器件可应用在Wimax,WiFi等3.5G、4G无移动通信网络中。 Dual- band LNA (Lower noise amplifier) is studied, and it is composed of the series MEMS capacity switch, cascode amplifier and other circuit, and gets the dual- band of 2.1GHz/4.6GHz LNA by the switch capacity variation. The first, a MEMS (Micro- Electric- Machine- Systems)capacity switch is designed, analysis the switch by EDA of HFSS, and obtain the insert loss and isolation with 2.1GHz and 4.6GHz, insert loss is about 2.2dB and isolation is about 30dB.The second, the MEMS switch is applied in the LNA circuit, and the circuit model is designed basing on the CMOS technology. The performance is obtained by test equipment, and the gain is 1.4dB and 12.5dB with 2.21GHz and 4.8GHz, dual - band noise coefficient is about 4. ldB,and isolation is about 30dB. It has good performance and applied for the 3.5G(Generation) ,4G mobile commnications, such as Wimax, Wifi systems.
出处 《激光杂志》 CAS CSCD 北大核心 2009年第4期50-51,共2页 Laser Journal
基金 鲁东大学校科研基金资助项目资助(编号:20052804)
关键词 双波段:MEMS开关 LNA 放大器 dual - band MEMS switch LNA amplifier
  • 相关文献

参考文献7

  • 1李应良.射频系统中MFAIS谐振器、滤波器基础理论及其应用研究.重庆邮电学院,2004,:21-44.
  • 2李应良,潘武.射频系统中MEMS谐振器和滤波器[J].光学精密工程,2004,12(1):47-54. 被引量:16
  • 3孙建海,崔大付.串联电容式RF-MEMS开关的研制[J].Journal of Semiconductors,2005,26(12):2445-2448. 被引量:5
  • 4赵继德,李应良,马传龙.微尺度下新型MEMS滤波器的研究[J].激光技术,2005,29(6):632-635. 被引量:2
  • 5John Danson, Calvin Plett, and Niall Tait. Using MEMS Capacitive Switches in Tunable RF Amplifiers[J]. EURASIP Journal on Wireless Communications and Networking,2004,27 (12) : 1 - 9.
  • 6Z. Li and K. O. Kenneth. A low - phase - noise and low - power multiband CMOS voltage - controlled oscillator [ J ]. IEEE Journal of Solid - State Circuits, 2005,40(6) : 1296 - 1302.
  • 7W. - S. Wuen and K. - A. Wen. Dual - hand switchable low noise amplifier for 5 - GHz wireless LAN radio receivers[C], in Proceedings of the 45th IEEE Midwest Symposium on Circuits and Systems (MWSCAS '02), 2002,8,2:258-261, Tulsa,Okla,USA.

二级参考文献35

  • 1蒋振新,丁桂甫,杨春生,毛海平,张永华.共面波导有限金属厚度效应的研究[J].微波学报,2004,20(2):25-28. 被引量:2
  • 2孙建海,崔大付,王海宁,王利,徐磊,苏波.悬臂梁接触式RF-MEMS开关的制作研究[J].微细加工技术,2005(1):71-74. 被引量:5
  • 3Yong-Kweon. RF MEMS and applications[J]. Microwave Journal,2002,(3):4-48.
  • 4NGUYEN C T C. Micromechanical components for miniaturized low-power communications[C]. Proceedings, 1999 IEEE MTT-S International Microwave Symposium RF MEMS Workshop Anaheim, California, 1999,18: 48-77.
  • 5HANE K.Silicon optical MEMS:optical components and sensors[J].光学精密工程,2002,10(6):632-633.HANE K.Silicon optical MEMS:optical components and sensors[J].Optical and Precision Engineering,2002,10(6):632-633. (in Chinese)
  • 6TANG W C, NGUYEN T H, HOWE R T. Laterally driven polysilicon resonant microstructures [J]. Sensors and Actuators A, 1989(20): 25-32.
  • 7NGUYEN C T C. Micromechanical resonators for oscillators and filters[C], Proceedings of 1995 IEEE International Ultrasonics Symposium, Seattle, 1995,7-10:489-496.
  • 8TSU W T, CLARK J R, NGUYEN C T C. Q-optimized lateral free-free beam micromechanical resonators[C],Digest of Technical Papers, the 11th Int. Conf. on Solid-State Sensors & Actuators (Transducers 01), Munich, Germany, 2001,(6):1110-1113.
  • 9NGUYEN C T C. Communications applications of microelectromechanical systems[C], 1998 Sensors Expo,San Jose, CA, 1998,(5): 447-455.
  • 10STICKEL M, ELEFTHERIADES G V, KREMER P. A high-Q bulk micromachined silicon cavity resonator at Ka-band[C], Electronics Letters 29th, 2001,(3):433-435.

共引文献19

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部