摘要
为从理论上得出半导体桥电阻的计算方法,首先在电阻率一定的条件下,基于电阻的基本表达式,用积分的方法得出电阻关于几何尺寸和形状的计算公式。然后基于半导体物理理论,对电阻率和掺杂浓度以及温度之间的关系进行了分析,建立了对于一定掺杂浓度的半导体桥电阻率随温度变化的模型,并得出电阻率随温度变化的简化计算方法。此研究对于半导体桥换能元电阻的设计具有理论和实际意义。
In order to obtain theoretic calculation method for resistance of semiconductor bridge, on certain resistivity condition, the relationship between its static resistance and dimension is described with function. A relationship expression has been derived for resistivity of SCB, dopant concentration and temperature based on semiconductor physics. The result expression allows one to obtain resistance as a function of concentration and temperature. It is important to design the semiconductor bridge and research its property.
出处
《火工品》
CAS
CSCD
北大核心
2009年第3期1-5,共5页
Initiators & Pyrotechnics
关键词
半导体桥
电阻
几何尺寸
电阻率
掺杂浓度
温度
Semiconductor bridge
Resistance
Dimension
Resistivity
Dopant concentration
Temperature
