射频反应溅射法制备SnO_(2-x)纳米薄膜的气敏特性研究

Gas sensing characteristics of SnO_(2-x) films deposited by RF reaction sputtering

采用射频反应溅射法在不同氧气分压下制备SnO2-x薄膜,然后在不同温度下对其进行退火处理.利用X射线衍射分析(XRD)和扫描电子显微镜(SEM)等表征技术,研究了制备条件对SnO2-x薄膜的结晶性能和表面形貌的影响.研究结果显示,当氧气分压为50%时,可以制备出质量较高的SnO2-x纳米薄膜.当退火温度从450℃升高到550℃,样品的电阻率降低.退火温度500℃的样品在工作温度225℃时,对乙醇有较高的灵敏度,灵敏度达67%,对丁烷的灵敏度不高.

SnO2-x thin films were deposited by RF reaction sputtering in different oxygen partial pressures, and annealed in different temperatures in oxygen atmosphere. X-ray diffraction analysis （XRD） and scanning electron microscopy （SEM） were used to study the effects of the deposition conditions on the crystallization and surface topography of SnO2-x film. The results indicated that high quality SnO2-x thin films were successfully fabricated when the oxygen partial pressures was higher than 50 %. Annealing temperature greatly affected the surface topography of SnO2-x films. The static resistances of the samples annealed at 450 ℃to 550 ℃ decreased very quickly. Measurements of sensitivity showed that the films annealed at 500 ℃ had high ethanol sensitivity （67%）, the sensitivity of butane is not high in the temperature around 225 ℃. The best SnO2-x gas sensing processing parameters were partial pressure of oxygen of 50 percent, annealing temperature of 550 ℃, the best work temperature of 225℃.