摘要
ZnO是一种纤锌矿结构的第三代宽带隙半导体材料,在光电和铁电器件领域具有优良的应用前景。本文综述了近年来ZnO材料在制备与诸如压电、铁电、介电与多铁等物理性质方面的研究进展,指出了ZnO在铁电、介电与多铁性质研究方面中存在的问题,并提出解决的思路。
Zinc oxide (ZnO) with a wurtize structure, which exhibit excellent applications in the area of photoelectric device and ferroelectric device in the future, is the third generation wide band gap semiconductor materials. In this paper, the recent progress of preparation technique and physical properties such as ferroelectric, piezoelectric, dielectric and muhiferroic for ZnO materials was reviewed. The existing problems in the research of the ferroelectric, dielectric and multiferroic properties were clarified, and idea of resolving such problems was proposed.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2009年第4期756-760,共5页
Bulletin of the Chinese Ceramic Society
基金
国家自然科学基金(50802023)
河南省科技攻关重点项目(082102270039)
河南省教育厅自然科学研究计划(2008B140002,2008B140003,2009A430002)
河南大学科研基金资助(07YBGG008)
关键词
ZNO
铁电
压电
介电
多铁
ZnO
ferroelectrics
piezoelectrics
dielectrics
multiferroics