提高多晶电阻工艺稳定性

Improve Polysilicon Resistor Process Stability

文章通过对多晶薄膜的性质和多晶电阻形成工艺的稳定性研究,剖析在生产过程中三种形成多晶电阻主要工艺的波动情况,并对形成工艺波动的原因和控制方法进行了讨论。同时对于采取控制方法以后的多晶电阻的工艺情况进行分析,证明提高多晶电阻制造工艺稳定性必须提高多晶淀积和离子注入工艺能力,以及如何提高多晶淀积和离子注入的受控。最后对采取控制措施后的多晶电阻的改善效果进行回顾,说明离子注入工艺采取除气和多晶淀积隔片放置方式有效地提高了多晶电阻工艺的稳定性。

This article focuses on the study ofpolysilicon film and polysilicon resistor process. It analyzes the variation of polysilicon resistor processing, it also talk about the causes of variation and control methods. We checked the results after control methodes took effect, it proved that the capability of ion iplantation and polysilicon film deposition must be improved to ameliorate the capability of polysilicon resistor processing. In the end, we reviewed the effect, out gas before ion implantation and septa methods in polysilicon deposition improves polysilicon resistor process stability effectively.