摘要
The partial deposit films on p-silicon wafers were formed from three kinds of plating solution: chloro-platinic acid, potassium tetranitroplatinate and diammine platinium dinitrate under Nd: YAG laser irradiation. The compositions and properties of the depositswere investigated by AES, SEM and XPS techniques. The Pt deposits have ohmic contactwith p-type silicon.
The partial deposit films on p-silicon wafers were formed from three kinds of plating solution: chloro-platinic acid, potassium tetranitroplatinate and diammine platinium dinitrate under Nd: YAG laser irradiation. The compositions and properties of the depositswere investigated by AES, SEM and XPS techniques. The Pt deposits have ohmic contactwith p-type silicon.
出处
《应用化学》
CAS
CSCD
北大核心
1998年第4期104-106,共3页
Chinese Journal of Applied Chemistry
