缓冲层厚度对Ge／Si多层膜的影响

Effect of Buffer Layer Thickness on Ge/Si Multilayer

采用离子束溅射技术,通过改变Si缓冲层厚度,在p型Si衬底生长了一系列的Ge/Si多层膜样品。利用Raman光谱、X射线小角衍射以及原子力显微镜等分析测试技术,研究了多层薄膜的结晶、膜层结构、表面形貌等性质。结果表明:通过引入缓冲层,在一定程度上可以提高颗粒的结晶性;随着缓冲层逐渐沉积,来自界面态的影响有了明显的减弱,且多层膜结构的生长得到有效改善。红外吸收光谱实验表明多层膜的吸收特性与其周期结构密切相关,因此可以通过改变缓冲层厚度的方法,实现对多层薄膜红外吸收特性的调制。

The Ge/Si multilayer samples were grown with different thick Si buffer layer on p type-Si substrates by ion beam sputtering technique. The crystallization, periodic structure, surface morphology and infrared absorption property were investigated by Raman spectroscopy, small angle X-ray diffraction, AFM and infrared absorption spectra. The results indicate that buffer layer could promote the crystallization of grains; and the layer structures of these samples got advanced as buffer layer deposited and effect of interface stateweakened; moreover, there was a connection between the periodic structures of samples and infrared absorption properties, which made it possible that buffer layer thickness modulated the infrared absorption.