径向三重流MOCVD反应器生长GaN的数值模拟

Numerical Modelling of GaN Growth in Radial Flow MOCVD Reactor with Three-separate Vertical Inlets

采用计算流体力学方法对生长半导体材料GaN的重要设备三重进口行星式MOCVD(金属有机物化学气相沉积)反应室中的输运过程进行了二维数值模拟。从浓度场的角度分析反应器内衬底上方NH3和TMGa的浓度影响因素。根据对模拟结果的分析,发现较均匀的流场对应衬底上方的反应物浓度较高,降低反应器内压强,也可获得衬底上方较高的反应物浓度,由于MOCVD反应器内有较大的温差,因此热扩散效应不能忽视。

Two-dimensional numerical study on transport process in a radial flow MOCVD reactor with three-separate vertical inlets was conducted. The inflence of operating parameters on concentration of NH3 and TMGa at susceptor surface was investigated. It is found that uniform flow fields and reducing the pressure correspond to higher susceptor concentration. Thermal diffusion is a assignable factor because of large thermal gradient taking place in MOCVD system.