硅晶片热氧化前的清洗技术探索

Exploration of Wafer Cleaning before Thermal Oxidation

阐述了硅晶片表面的各种沾污对热氧化生长的氧化膜质量的影响。进行了数组热氧化前硅晶片表面沾污清洗的实验,分析清洗液浓度、温度、超声等因素对清洗效果的影响。在显微镜下观察试验结果,对清洗后硅晶片表面出现的微粗糙度、蚀点及损伤等情况做了详细分析,并对引起这些情况的因素重新制定考察水平,进行优化改进,得到最佳的清洗效果。

This paper introduces the impact of wafer contamination on the quality of oxide film that grew out of thermal oxidation. Through array of experiments on wafer surface contamination cleaning before thermal oxidation, the paper analyses the impact of solvent concentration, temperature and ultra-sonic on cleaning, and makes a study of micro-roughness, etch point after cleaning. According to the study results, takes improved process, and reaches an optimal cleaning effects.