稀土Dy掺杂纳米SnO_2薄膜的结构与气敏特性

Structure and gas sensing properties of SnO_2 nanometer films by Dy-Doped

采用真空蒸发法在玻璃衬底上制备稀土Dy掺杂Sn薄膜,对薄膜进行合适的氧化、热处理后获得Dy掺杂SnO2薄膜。用X射线衍射、场发射扫描电子显微镜、静态配气法对薄膜性能进行测试,研究不同掺Dy含量和热处理条件对SnO2薄膜的影响。结果显示,制备的SnO2薄膜呈金红石结构为n型;在相同热处理条件下,Dy掺杂可明显缩短薄膜氧化、热处理的时间;适当掺入稀土Dy可明显改善SnO2薄膜的结构、气敏特性。掺Dy 3at%后可大大提高SnO2薄膜对丙酮气体的灵敏度。

Dy- doped SnO2 thin films were prepared by vacuum evaporation on glass substrates to obtain the SnO2 ： Dy thin films by oxidation and heat treatment of Sn films. Properties of the films were tested by XRD, FE - SEM and stationary state gas distribution method to study the influence of different Dy doping content and heat treatment condition on SnO2 thin films. The results showed that the SnO2 thin films showed n - type rutile structure. The time of oxidation and heat treatment of the thin films reduced obviously by Dy doping in the same heat treatment condition. The structure and gas sensing properties of SnO2 thin films with suitable Dy doping were improved. The sensitivity of SnO2 thin films with 3% Dy doping to acetone enhanced greatly.