摘要
当太阳光照射p-n结时,在半导体内的电子由于获得了光能而释放电子,相应地便产生了电子——空穴对,并在势垒电场的作用下,电子被驱向n型区,空穴被驱向p型区,从而使n区有过剩的电子,p区有过剩的空穴。于是,就在p-n结的附近形成了与势垒电场方向相反的光生电场。
When the sunlight when the p-n junction, in the semiconductor electronic access to the light as a result of the release of e-, have given rise to a corresponding e- hole pairs. Electric field in the barrier under, e-to be expelled to the n-type area, hole to be expelled to the p-type area, so that there are excess n e, p area of the hole excess. Thus, in the p-n junction near the barrier electric field with opposite direction of the photovoltaic field.
出处
《灯与照明》
2009年第3期49-51,共3页
Light & Lighting
基金
鲁东大学"大学生科技创新基金立项"(08L011)
关键词
太阳能
光伏发电
半导体
电池
solar energy
photovohaic power generation
semiconductor
battery