大功率集成器件——集成门极换流晶闸管IGCT

High Power Integrate Devices——Integrated Gate Commutated Thyrister

介绍一种大功率集成器件——集成门极换流晶闸管IGCT(Integrated Gate CommutatedThyrister),它具有大电流、高电压、开关频率高、高可靠性、结构紧凑、低损耗的特点,在性能上明显优于目前广泛使用的GTO和IGBT器件。介绍了IGCT器件的基本结构、工作原理和关键技术,并指出它必将成为大功率应用中的首选电力半导体器件。

This paper introduces a high -power integrated device IGCT （Integrated Gate Commutated Thyrister）. It has high current, high voltage, high switching frequency and low - loss characteristics. Its performance is superior to the GTO and IGBT devices. The paper introduces the structure features, working principle of IGCT, and key technology. It points out that IGCT will become the prior option for high power application.