摘要
电流分布是影响大功率LEDs器件性能的重要因素,与传统结构GaN基器件比较,垂直结构器件通过采用上下电极分布,明显改善了LEDs器件内部电流分布均匀性。通过理论分析与数值计算,建立起了垂直结构GaN基LEDs电流分布模型,研究了垂直结构GaN基LEDs电流分布及I-V特性。结果表明,与传统平面结构比较,垂直结构GaN基LEDs的电流分布均匀性得到了明显改善,同时正向电压降低约7%。最后,通过晶片键合与激光剥离技术,制备了垂直结构GaN基LEDs,测试结果表明,实验结果和理论计算值相吻合。该结果对GaN基LEDs器件的优化设计具有重要指导意义。
Current distribution is an important factor to high-power LEDs, compared with conventional GaN based LEDs structure, vertical electrodes structure can improve the current uniformity to some extend. The current distribution and I-V characteristics of vertical structure GaN-based LEDs with ITO current spreading layer was analyzed by theoretical calculation. The results indicate that the current uniformity of vertical structure is improved drastically. The forward voltage is decreased 7 %. Vertical structure GaN-based LEDs was fabricated and the electrical character was measured. Experiment result exhibits good agreement with the theoretical calculation. The results have great signicanle for the optimization of GaN-based LEDs design.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第9期861-863,871,共4页
Semiconductor Technology
