期刊文献+

0.13μm CMOS宽带大动态范围六阶跨导电容低通滤波器(英文) 被引量:2

6^(th) Order High Bandwidth High Dynamic Range G_m-C LPF in 0.13 μm CMOS
下载PDF
导出
摘要 提出了一种适用于宽带大动态范围应用的六阶跨导电容低通滤波器。该滤波器为Chebyshev类型,采用开环级联结构来实现。通过一组开关电容阵列来补偿由工艺温度等因素引入的截止频率的偏差。实际测试结果表明,该滤波器的-3dB截止频率可调范围为30~100MHz,在500mVp-p输入信号幅度下,IM3为-48dB。电源电压为3V时,消耗电流25mA,芯片面积为0.5mm2。该滤波器采用TSMC0.13μm CMOS工艺实现。 A continuous time 6th order Gm-C low pass filter (LPF) for high bandwidth and high dynamic range application was presented. The filter was implemented with Chebyshev biquad cascade structure. A programmable switched-capacitor array was used to compensate the cut-off frequency variation induced by process, temperature etc. The measurement results indicate that the - 3 dB cut-off frequency can be tuned from 35 MHz to 100 MHz. The two-tone test shows that the in-band IM3 can achieve - 48 dB with 500 mVp-p input swing. Fabricated in TSMC 0.13μm CMOS technology, the proposed filter consumes 25 mA current with 3 V power supply and occupies 0.5 mm^2 area.
出处 《半导体技术》 CAS CSCD 北大核心 2009年第9期903-906,共4页 Semiconductor Technology
基金 Project Supported by Beijing Municipal Science & Technology Commission (D0304004040111)
关键词 跨导电容滤波器 Chebyshev滤波器 低通滤波器 连续时间滤波器 CMOS 二阶节 Gm-C filter Chebyshev filter low pass filter (LPF) continuous time filter CMOS biquad
  • 相关文献

参考文献6

  • 1ul-HASAN M, SUN Y C,ZHU X. Oscillation-based DFT for second-order OTA-C filters [C]// IEEE Int Symp on Circuits and Systems. Seattle, USA, 2008:720 - 723.
  • 2PLETTC, COPELAND M A, HADAWAY R A. Continuoustime filters using open-loop tunable transconductance amplifiers [C]// IEEE Int Syrup on Circuits and Systems. San Jose, USA, 1986: 1172-1176.
  • 3MASUDA S, KITAMURA Y. Design consideration of monolithic continuous-time filters [C]// IEEE Int Symp on Circuits and Systems. San Jose, USA, 1986: 1165-1168.
  • 4D'AMICO S, GIANNINI V, BASCHIROTFO A. A 4th-order active- GM-RC reconfigurable (UMTS/WLAN) filter [J]. IEEE J of SSC, 2004, 41(7): 1630-1637.
  • 5TSIVIDIS Y P, VOORMAN J O. Integrated continuous -time filters [M]. New York: IEEE Press, 1993: 230-250.
  • 6TSIVIDIS Y, CZARNUL Z, FANG S C. MOS trans conductors and integrators with high linearity [J] . EL, 1986,22 ( 5 ) : 245-246.

同被引文献11

引证文献2

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部