磁控溅射低温沉积ITO薄膜及其光电特性研究

Research on Photoelectric Characteristics of ITO Film Prepared by DC Magnetron Sputtering at low Temperature

采用直流反应磁控溅射法低温沉积ITO薄膜，用XRD、SEM和UV—Vis分别表征ITO薄膜的晶体结构、表面形貌及其紫外-可见光吸收谱，研究了氧分压、溅射功率及薄膜厚度等工艺参数对薄膜光电性能的影响，结果表明，氧分压过大时，ITO薄膜中有大量的位错和缺陷，使薄膜的电阻率变大，导电性变差；氧分压过小时，薄膜中将有大量氧空位产生，导致晶格变形，使电阻率增加。随着溅射功率增大，在相同时间内薄膜厚度增加，方块电阻减小，薄膜电阻率降低。随着薄膜厚度增加，制备的薄膜晶体结构相对完整，载流子浓度和迁移率逐渐增大，薄膜电阻率变小，进而对样品的光电性能产生明显影响。

ITO thin film were prepared by DC magnetron sputtering at low temperature, and properties of the films were characterized by XRD, XPS, SEM and UV-Vis. The influences of oxygen partial pressure, sputtering power and thickness on the electrical and optical properties of ITO thin films were investigated. The results show that the resistivities of ITO thin films would be increased and the corresponding conduetivities were reduced with increasing or decreasing of oxygen partial pressure. And the square resistance of ITO thin film would be reduced and film resisfivities were decreased with increasing sputtering power, when increasing the thickness of fihn, the crystallization degrees of the ITO thin film became better, carrier concentration and mobility increased gradually, and the corresponding film resistivities decreased. The resuits would affect the ITO film characteristics significantly.