摘要
目的:研究外源性血管内皮生长因子(VEGF)在新生鼠缺氧缺血脑损伤(Hypoxic-ischemic brain damageHIBD)模型中的表达情况。方法:构建了负载有鼠VEGF120 cDNA的真核表达质粒pCDNA3.1,建立新生鼠缺氧缺血脑损伤模型,将质粒注射至新生鼠缺氧缺血脑损伤局部,探讨外源性VEGF在新生鼠脑内的表达情况。应用VEGF免疫组织化学方法检测转移pCDNA3.1/rVEGF120真核表达质粒后大鼠脑中VEGF的表达情况。结果:与转移空载质粒的对照组相比,脑内注射外源性VEGF基因,在大脑皮质及海马的神经细胞、神经胶质细胞及血管内皮细胞胞浆中高度表达。结论:在HIBD模型中,脑内注射的外源性VEGF基因在大脑皮质及海马处神经细胞、胶质细胞、血管内皮细胞胞浆中高度表达。
Objective: To investigate the expression of vascular endothelial growth factor (VEGF) in models of hypoxic - ischemic brain damage (HIBD) of neonatal rats. Methods: VEGF eukaryotic expression plasmid (pCDNA3.1/rVEGF120) was constructed by cloning rat VEGF120 cDNA into eukaryotic expression vector pCDNA3. 1. The HIBD models were established with neonatal rats, then the brains of HIBD models were injected with expression plasmid, the expression of VEGF in neonatal rats was explored and detected by immunohisto- chemistry. Results: Compared to control group, high level of extrinsic VEGF was detected in neurons, astrocytes and vascular endothelial cells in cerebral cortex and hippocampus. Conclusion : High level of extrinsic VEGF can be detected in neurons, astrocytes and vascular endothelial cells in cerebral cortex and hippocampus.
出处
《中国妇幼保健》
CAS
北大核心
2009年第26期3705-3707,共3页
Maternal and Child Health Care of China
关键词
缺氧缺血性脑损伤
血管内皮生长因子
基因表达
Hypoxic -ischemic brain damage
Vascular endothelial growth factor
Gene expression