摘要
A simple process for the deposition of CulnSe2 thin films was described. The CulnSe2 compound was prepared by selenization of Cu-In alloy precursors, which were electrodeposited at a constant current. The selenized precursors were compacted and then annealed. The films were characterized by X-ray diffractometry （XRD）, scanning electron microscopy （SEM） and energy dispersive spectroscopy （EDS）. The results indicate that single-phase CulnSe2 is formed at 250℃ and its crystallinity of this phase is improved as the annealing temperature rises. The losses of In occur in selenization process. The dense CulnSe2 film with comparatively smooth surface can be obtained by compaction under the pressure of 200 MPa.
A simple process for the deposition of CulnSe2 thin films was described. The CulnSe2 compound was prepared by selenization of Cu-In alloy precursors, which were electrodeposited at a constant current. The selenized precursors were compacted and then annealed. The films were characterized by X-ray diffractometry （XRD）, scanning electron microscopy （SEM） and energy dispersive spectroscopy （EDS）. The results indicate that single-phase CulnSe2 is formed at 250℃ and its crystallinity of this phase is improved as the annealing temperature rises. The losses of In occur in selenization process. The dense CulnSe2 film with comparatively smooth surface can be obtained by compaction under the pressure of 200 MPa.
