平均价电子数与掺杂MgB2体系临界电流密度的关系

Relationship between the number of average valence electrons and the critical current density of the doping MgB_2

研究了掺杂二硼化镁超导体系的平均价电子数与临界电流密度之间的关系,发现它们之间有较好的规律性。由此,提出用平均价电子数作为提高掺杂二硼化镁超导体临界电流密度的一个新依据,对今后二硼化镁超导电性的改善有很好的指导意义。

The correlation between the number of average valence electrons and the critical current density of the doping MgB2 was researched in this paper, a good nile was found. It＇s suggested that the number of average valence electrons can be used as a new good criterion for the experiment enhancing of critical current density of doping MgB2. This is a good guidance for improving the superconductivity of MgB2.