静电辅助的气溶胶化学气相沉积法制备Y_2O_3薄膜

Deposition of Y_2O_3 thin films by electrostatic spray assisted vapor deposition method

采用静电辅助的气溶胶化学气相沉积的方法成功地在Si(100)衬底上制备了Y2O3薄膜,利用X射线衍射(XRD)、场发射扫描电镜(FE-SEM)、原子力显微镜(AFM)和X射线光电子能谱(XRP)对薄膜进行了表征.SEM分析结果显示,薄膜的颗粒为纳米级的,并且薄膜致密、平整.AFM分析结果表明,薄膜的粗糙度为11nm.由XPS分析可知,薄膜为基本上符合化学计量比的氧化物.附着力测试表明,Y2O3薄膜与Si衬底的附着力为4.2N.X射线衍射分析结果表明,沉积得到的Y2O3薄膜在热处理前为非晶结构,热处理之后薄膜具有立方晶体结构,并且沿(111)面择优生长.

Y2O3 thin films were successfully deposited onto Si （100） substrates by the electrostatic spray assisted vapor deposition （ESAVD） method. The films were characterized by X-ray diffraction （XRD）, field emission scanning electron microscopy （FESEM）, atomic force microscopy （AFM） and X-ray photoelectron spectroscopy （XPS）. The results of FE-SEM analysis showed that Y203 thin films were homogeneous, uniform and nanostructural. AFM analysis indicated that Y203 thin films had low surface rough- ness（ 11 nm）. XPS analysis results showed that the deposited thin Y2O3 oxide films were close to their stoichiometry. The coalescent strength of the Y2O3 film to the Si substrate was 4.2 N. XRD patterns indicated that Y2O3 thin films with （111） oriented growth were obtained after heat treatment, whilst the Y2O3 thin films were amorphous before heat treatment.