摘要
The effect of a high temperature AlN buffer layer grown by the initially alternating supply of ammonia （IASA） method on AlGaN/GaN heterostructures was studied. The use of AlN by the IASA method can effectively increase the crystalline quality and surface morphology of GaN. The mobility and concentration of 2DEG of AlGaN/GaN heterostuctures was also ameliorated.
The effect of a high temperature AlN buffer layer grown by the initially alternating supply of ammonia （IASA） method on AlGaN/GaN heterostructures was studied. The use of AlN by the IASA method can effectively increase the crystalline quality and surface morphology of GaN. The mobility and concentration of 2DEG of AlGaN/GaN heterostuctures was also ameliorated.
基金
Project supported by the Key Program of the National Natural Science Foundation of China(No.60736033)
the National Key S&T Special Project(No.2008ZX0101002-003)
the National Defense Scientific and Technical Pre-Research Program of China(Nos. 51311050112,51308030102,51308040301)
