摘要
Total dose hardened fully-depleted SOI materials are fabricated on separation by implanted oxygen （SIMOX） materials by silicon ion implantation and annealing. The ID-VG characteristics of pseudo-MOS transistors pre- and post-irradiation are tested with ^60Co gamma rays. The chemical bonds and the structure of Si in the buried oxide are also studied by X-ray photoelectron spectroscopy and cross-sectional high-resolution transmission electron microscopy, respectively. The results show that Si nanocrystals in the buried oxide produced by ion implantation are efficient deep electron traps, which can significantly compensate positive charge buildup during irradiation. Si implantation can enhance the total-dose radiation tolerance of the fully-depleted SOI materials.
Total dose hardened fully-depleted SOI materials are fabricated on separation by implanted oxygen （SIMOX） materials by silicon ion implantation and annealing. The ID-VG characteristics of pseudo-MOS transistors pre- and post-irradiation are tested with ^60Co gamma rays. The chemical bonds and the structure of Si in the buried oxide are also studied by X-ray photoelectron spectroscopy and cross-sectional high-resolution transmission electron microscopy, respectively. The results show that Si nanocrystals in the buried oxide produced by ion implantation are efficient deep electron traps, which can significantly compensate positive charge buildup during irradiation. Si implantation can enhance the total-dose radiation tolerance of the fully-depleted SOI materials.
