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Analytical models for the base transit time of a bipolar transistor with double base epilayers

Analytical models for the base transit time of a bipolar transistor with double base epilayers
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摘要 The doping profile function of a double base epilayer is constructed according to drift-diffusion theory. Then an analytical model for the base transit time τb is developed assuming a small-level injection based on the characteristics of the 4H-SiC material and the principle of the 4H-SiC BJTs. The device is numerically simulated and validated based on two-dimensional simulation models. The results show that the built-in electric field generated by the double base epilayer configuration can accelerate the carriers when transiting the base region and reduce the base transit time. From the simulation results, the base transit time reaches a minimal value when the ratio of L2/L1 is about 2. The doping profile function of a double base epilayer is constructed according to drift-diffusion theory. Then an analytical model for the base transit time τb is developed assuming a small-level injection based on the characteristics of the 4H-SiC material and the principle of the 4H-SiC BJTs. The device is numerically simulated and validated based on two-dimensional simulation models. The results show that the built-in electric field generated by the double base epilayer configuration can accelerate the carriers when transiting the base region and reduce the base transit time. From the simulation results, the base transit time reaches a minimal value when the ratio of L2/L1 is about 2.
作者 张倩 张玉明 张义门
机构地区 Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第9期33-36,共4页 半导体学报（英文版）
基金 Project supported by the National Natural Science Foundation of China (No.60876061) the Pre-Research Project (No.51308040302)
关键词 4H-SIC bipolar junction transistors build-in electric field base transit time 4H-SiC bipolar junction transistors build-in electric field base transit time
分类号 TN32 [电子电信—物理电子学]
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参考文献11

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Journal of Semiconductors
2009年 第9期

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