氧化物稀磁半导体材料的理论与实验研究进展

Theoretical and Experimental Research Progress of Oxide Diluted Magnetic Semiconductors

以氧化物宽禁带半导体为基体,通过掺杂磁性元素,可将非磁性半导体转变成铁磁性半导体,利用这些铁磁性半导体,能将新型的自旋电子器件集成到传统的微电子器件上,构成功能丰富的新型器件。由于稀磁半导体材料在自旋电子学中的重要作用,近年来受到广泛的关注。简要总结了有关氧化物稀磁半导体研究的发展状况;分析了制备条件对其磁性的可能影响;重点介绍了该系统中有关磁性起源的理论模型,包括双交换机制、磁极化子模型、RKKY模型等;比较了2种磁极化子理论模型,并对这些模型的适用范围进行了分析讨论。另外,还介绍了该体系微结构和磁结构的一些检测方法以及与磁性相关的输运性质、反常霍尔效应等。

Oxide diluted magnetic semiconductors（ODMSs） have attracted a great deal of interest in recent years due to the possibility of inducing nonmagnetic semiconductors into room temperature ferromagnetism by doping magnetic elements. Ferromagnetic semiconductors promise efficient spin injection, transport and potential seamless integration with current semiconductor technology. The research progress of ODMS in experiment and theory is de- scribed in this review. The ferromagnetic mechanisms including double exchange, bound magnetic polaron, RKKY are introduced in detail; the technique for the observation of the microstructural properties of ODMS which is important to understand the origin of ferromagnetism is included; the other two important aspects of ODMS, transport and anomalous Hall effect, are also introduced.