磁控溅射工艺参数对Cu薄膜织构的影响

Effect of sputtering parameters on texture of Cu films

介绍了直流磁控溅射制备Cu薄膜时,溅射功率和玻璃基片温度等工艺参数的变化对薄膜织构的影响.靶材采用质量分数大于99.9%的铜靶,溅射室内真空度低于1.7×10-4,在氩气为保护气体的氛围下制备薄膜.用X射线衍射(XRD)、扫描电镜(SEM)测试分析了薄膜的物相结构、表面组成、表面形貌的变化.结果表明,随着玻璃基片温度升高,薄膜微观结构呈明显的差异.随着溅射功率的增大,溅射速率增大,薄膜织构减弱;当功率增大到200 W时,速率开始减小,织构开始增强.选择功率40 W、溅射气压0.5 Pa、衬底温度423 K和473 K的工艺参数,可获得表面结构平滑、致密和呈微小晶粒结构的薄膜.

Cu films were deposited on glass substrates by D. C. magnetron sputtering using Cu target with purity of more than 99.9% in Ar atmosphere by changing sputtering power and temperature of the glass substrates. The structures, surface composition of the films and the effect of sputtering parameters on the films texture were analyzed by X - ray diffraction （XRD） and scanning electron microscopy （SEM）. The results indicate that the film with smooth and dense structure and minute grains can be obtained if the sputtering pressure is 0.5 Pa, the sputtering power is 40 W and the temperature of the glass substrates are 423 K and 473 K.