基于Al_xN_y绝缘介质膜的新型窗口大功率半导体激光器

High Power Semiconductor Lasers of New Window on Insulation Film of Al_xN_y

提升半导体激光器的腔面抗光学灾变(COD)损伤的能力,改善半导体激光器的工作特性,一直是大功率半导体激光器器件工艺研究的难点。基于薄膜应力使基底半导体材料带隙变化的原理,采用直流磁控溅射方法在不同条件下溅射生成不同内应力的Al_xN_y绝缘介质膜。通过研究大功率半导体激光器腔面退化机理,借助Al_xN_y等应力膜设计制作了一种新型非吸收透明窗口结构的宽条形半导体激光器,使器件平均最大输出功率提高46.5%。垂直发散角达到21°,水平发散角达到6.1°,2000 h加速老化试验,其千小时退化速率小于0.091%。

It is the most difficult point for high power semiconductor lasers to improve the abilities of lasers to resist catastrophic optical damage（COD） and work characteric of LDs. According to the principle that the energy gap of film materials can be influenced by internal strain stress, direct current magnetron sputtering has been used for preparing AlxNy dielectric films with different stresses under different deposition conditions. Broad area semiconductor lasers with a new no-absorption window has been designed considering cavity degradation of devices, peak power output has increased by 46. 5 percent for the new structural device, perpedicularity divergence angle is up to 21°, parallel divergence angle is up to 6.1°. It has been less than 0. 091 percent of aging speed per thousand of the LDs after testing of 2000 h aging.