SOI键合材料的TEM研究

TEM Study on Bonded SOI Materials

用横断面透射电子显微术（ＴＥＭ）研究了用键合方法获得的ＳＯＩ材料的界面结构。绝缘层二氧化硅和硅膜的厚度非常均匀，Ｓｉ膜／ＳｉＯ２以及ＳｉＯ２／Ｓｉ基体的界面平直且结合紧密，在界面上没有观察到缺陷和孔洞。

The interface structure of silicononinsulator (SOI) materials fabricated by wafer bonding was studied by crosssectional transmission electron microscopy (TEM). Both silicon film and insulator layer (SiO2) are homogeneous in thickness. The interfaces between silicon film and SiO2 or SiO2 and silicon substrate are even and wellbonded. No defect and hole were observed in the interfaces.