摘要
用横断面透射电子显微术(TEM)研究了用键合方法获得的SOI材料的界面结构。绝缘层二氧化硅和硅膜的厚度非常均匀,Si膜/SiO2以及SiO2/Si基体的界面平直且结合紧密,在界面上没有观察到缺陷和孔洞。
The interface structure of silicononinsulator (SOI) materials fabricated by wafer bonding was studied by crosssectional transmission electron microscopy (TEM). Both silicon film and insulator layer (SiO2) are homogeneous in thickness. The interfaces between silicon film and SiO2 or SiO2 and silicon substrate are even and wellbonded. No defect and hole were observed in the interfaces.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
1998年第4期274-276,共3页
Chinese Journal of Rare Metals
关键词
硅片键合
SOI
界面
微结构
TEM
Silicon wafer bonding, SOI, Interface, Microstructure