摘要
在热中子与快中子成份比大于７０的条件下，用６．５×１０１６ｃｍ－２和６．５×１０１８ｃｍ－２剂量水平辐照纯净ＧａＡｓ样品，研究由于嬗变产生的杂质和损伤。所得结果表明：热中子对Ｇａ、Ａｓ发生俘获核反应，其最终稳定产物Ｇｅ作为两性杂质元素被导入；复杂的移位缺陷形成及其热行为是影响辐照后ＧａＡｓ电学性质变化的重要因素。
The radiation damage on GaAs is investigated during transmutation doping. Ge, as amphoteric impurity, is introduced and its defect configuration as well as thermal behaviors have an effect on the electrical properties of GaAs during thermal recovery.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
1998年第4期347-351,共5页
Atomic Energy Science and Technology
