GaN基三阱量子级联激光器结构的垒层Al组分分析

STUDY OF Al COMPOSITION IN BARRIER OF GaN-BASED QUANTUM CASCADE LASER

基于不同的研究者报道的AlGaN/GaN三阱式量子级联激光器的垒层有不同的Al组分,通过对激光器一个周期单元的一维薛定谔方程与泊松方程进行自洽求解,得到了能带与电子波函数的分布情况,并且计算了在近共振条件下偶极跃迁矩阵元与垒层Al组分的关系,得到了Al组分的优化结果.

In order to optimize consistent calculation to the sc the Al composition of the barrier in GaN - based quantum cascade laser, a self - hrodinger and poisson equations of one periods in QCL has been done. The band structure and the electron envelope function are obtained. The relation between dipole matrix mement and A1 composition of the barrier is illuminated. The results show that the dipole matrix mement will be the largest when the optimized A1 composition is equal to 0.15.