射频磁控溅射和电子束蒸发制备ZnO薄膜特性的比较

Comparisons between ZnO thin films fabricated by RF-magnetron sputtering and Electron-beam evaporation

利用射频磁控溅射(Radio frequency-magnetro sputtering,RF-MS)和电子束蒸发(Electron beam evaporation,E-BE)方法制备ZnO薄膜,并对两种方法制备的薄膜在400、450和500℃退火后的微观结构、光学与电学性能进行比较.结果表明,RF-MS比E-BE制备的ZnO薄膜的晶粒细小且均匀,表面粗糙度小.两种方法制备的ZnO薄膜的平均透光率均大于80%,且随温度升高均表现出禁带宽度变小以及在380 nm附近出现近带边发射和绿光发射现象.此外,E-BE比RF-MS制备的ZnO薄膜的电阻率小.

Both Radio frequency-magnetron sputtering（RF-MS） and Electron-beam evaporation（EBE） methods have been used to fabricate ZnO thin films on glass substrates,respectively.The microstructure,optical and electrical properties of both the films after annealed at 400、450 and 500℃ have been compared.It is found that,compared with the filmfabricated by E-BE,the ZnO thin films fabricated by RF-MS has smaller and more homogeneous grain size and thus smaller roughness.Whereas a similar optical behavior is obtained for the films fabricated with both methods,that is,the mean of optical transmissions are all larger than 80%,the band-gaps decrease with the annealing temperature increasing and both exhibit a near band-edge emission near 380 nm and a green light emission.But the resistivity of the ZnO films fabricated by E-BE is smaller than that of the film fabricated by RF-MS.