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High-temperature Reaction of Silica Fume-Si_3N_4 System

High-temperature Reaction of Silica Fume-Si_3N_4 System
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摘要 The specimens were prepared by molding the mixture of silica fume ( w( SiO2 ) =94. 5% ; average particle size : 0. 08 μm ) and silicon nitride ( ≤ 0. 074 mm ) with a mass ratio of 1 : 1, carbon embedded firing at 1 300 ℃, 1 450℃, 1 500℃, 1 550 ℃ and 1 600 ℃ for 3 h in air, and then water-cooling, respectively. The microstructure and phase composition of the specimens were analyzed. The results show that: (1) silica fume reacts obviously with Si3N4 forming Si2N2O above 1 550 ℃. The edges and corners of Si3N4 grains become smooth and the Si3 N4 grains distribute in the continuous cementation phase of Si2N2O forming the dense structure of Si2N2o packed Si3N4 ; (2) below 1 500 ℃ , the edges and corners of Si3N4 grains are clear, Si2N2O doesn't form, and only SiO2 crystallizes from silica fume which happens obviously at 1 300 ℃. The specimens were prepared by molding the mixture of silica fume ( w( SiO2 ) =94. 5% ; average particle size : 0. 08 μm ) and silicon nitride ( ≤ 0. 074 mm ) with a mass ratio of 1 : 1, carbon embedded firing at 1 300 ℃, 1 450℃, 1 500℃, 1 550 ℃ and 1 600 ℃ for 3 h in air, and then water-cooling, respectively. The microstructure and phase composition of the specimens were analyzed. The results show that: (1) silica fume reacts obviously with Si3N4 forming Si2N2O above 1 550 ℃. The edges and corners of Si3N4 grains become smooth and the Si3 N4 grains distribute in the continuous cementation phase of Si2N2O forming the dense structure of Si2N2o packed Si3N4 ; (2) below 1 500 ℃ , the edges and corners of Si3N4 grains are clear, Si2N2O doesn't form, and only SiO2 crystallizes from silica fume which happens obviously at 1 300 ℃.
出处 《China's Refractories》 CAS 2009年第3期11-14,共4页 中国耐火材料(英文版)
关键词 Silica fume Silicon nitride Silicon oxynitride Silica fume, Silicon nitride, Silicon oxynitride
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