摘要
本文在LabVIEW 8.2开发环境下,通过对反射式高能电子衍射仪(RHEED)原理及样品砷化镓GaAs(001)_a(2×4)结构模型的表面原子结构进行深入探究,编程设计实现了理论情况下的GaAs(001)_a(2×4)表面原子结构RHEED图谱。该阶段性成果使有关虚拟RHEED实验系统课题的研究进一步深入,课题最终成果将具有双重意义。
Under the development environment of LabVIEW 8.2,through exploring the principle of (Reflection High Energy Electron Diffraetion)RHEED and the atomic structure of the sample Gallium Arsenide GaAs(O01)_ a(2×4) structural modelsurface in depth,this paper programmed,designed and implemented the RHEED patterns of GaAs (001)_a (2×4) surface atomic structure in theory circumstances.The staged production makes the study on the subject about virtual RHEED equipment system further in-depth.And the ultimate production of the study has a dual significance.
出处
《微计算机信息》
2009年第25期99-101,共3页
Control & Automation
基金
基金申请人:丁召
项目名称:GaAs表面相变过程的MBE/SMT研究
基金颁发部门:贵州省科技厅自然科学基金(Z073085)