化学沉淀法制备硒化铅薄膜

Preparation of PbSe film by chemical bath deposition

采用化学沉淀的方法沉淀PbSe薄膜,分别加入缓冲剂联氨(方法A)和碘化钾(方法B)。对反应原理进行了分析,对制备过程进行了优化,分别制备出了高质量的PbSe薄膜。采用XRD、SEM、EDS以及红外光谱测试对所制备样品进行了分析。结果表明,两种方法制备均为PbSe多晶薄膜,方法A制备薄膜结晶质量更好,择优生长方向明显;薄膜颗粒度、表面粗糙度都小于方法B;两种薄膜的Pb元素与Se元素比例接近化学计量比,方法B含有少量I元素;两种方法制备样品的吸收边相对带边跃迁都发生蓝移。

Lead selenide thin film with good erystallinity was deposited by chemical bath deposition using two buffering agents of N2H, （method A） and KI3 （method B）. Mechanisms of the reaction were discussed and deposition processes were optimized. XRD, SEM ,X -ray EDS analysis, fourier transform infrared spectroscopy were employed to characterize PbSe thin films. Experiments shew that the film obtained by method A was of better crystal quality, smaller grain size, preferential growth direction and smoother surface than that of the film obtained by method B. Composition of the film for both methods was close to stoichiometry. A dear blue shift of absorption edge exists for both films, which can be attributed to quantum confinement effect due to PbSe nano structure.