摘要
报道了用低压金属有机物化学气相淀积（ＬＰ－ＭＯＣＶＤ）方法外延生长ＩｎＧａＡｓＰ／ＩｎＰ应变补偿多量子阱结构。用此材料制备的掩埋异质结（ＢＨ）条形结构多量子阱激光器具有极低阈值电流４～６ｍＡ。２０～４０℃时特征温度Ｔ０高达６７Ｋ，室温下外量子效率为０．３ｍＷ／ｍＡ。
A 1.3 μm InGaAsP/InP strained compensated multi quantum wells structure grown by low pressure metalorganic chemical vapor deposition (LP MOCVD) was proposed. The threshold currents of buried heterostructure (BH) MQW lasers with this strained layers structure were 4￣6 mA mostly. The characteristic temperatures up to 67K were observed for the devices under a temperature between 20￣40℃, the single facet slope efficiency is 0.3 mW/mA at room temperature.
出处
《中国激光》
EI
CAS
CSCD
北大核心
1998年第9期785-788,共4页
Chinese Journal of Lasers
