摘要
能够精确控制离子注入的能量从而控制掺杂的深度是离子注入机的重要特征。本文讨论了大束流离子注入机能量污染,产生的原因及降低能量污染的方法。
The ability of controlling doping depth by monitoring ion beam energy accurately is an advantage of ion implanter over other doping equipment.In this paper the energy contamination and the reason of its generation are discussed.The methods of redu cing energy contamination are also discussed.
出处
《半导体情报》
1998年第4期52-55,共4页
Semiconductor Information