摘要
在ＧａＡｓ衬底上ＭＢＥ生长大失配ＩｎＡｓ薄膜，虽然在界面处存在大量位错，但仍能在ＩｎＡｓ薄膜中得到较高的电子迁移率．掺Ｓｉ样品的迁移率比同厚度未掺杂的样品要高．且对未掺杂的ＩｎＡｓ薄膜，迁移率在室温附近有一个明显的极小值．这些反常行为可以通过体层和界面层电子的并联电导模型来解释．
Abstract The transport properties of large lattice mismatched InAs/GaAs heterojunctions are examined.In spite of a high dislocation density at the heterointerface,very high electronic mobilities are obtained in the InAs film. The mobilities demonstrate a pronounced mimimum around room temperature in undoped samples. By doping Si into the layer far from the InAs/GaAs interface, a higher mobility than the undoped sample with the same thickness is always obtained. Such abnormal behavior is explained by the parallel conduction from the quasi bulk carriers and interface carriers. The high mobility InAs films are found to be suitable materials for making Hall elements.
