氮化物半导体GaN的光辅助湿法腐蚀

Light Assisted Wet Etching of Semiconductor Nitride GaN

本工作报道了一种光辅助湿法腐蚀半导体氮化物ＧａＮ的新方法．这一腐蚀技术具有简单，易控制和低损伤等优点．采用２００Ｗ汞灯辐照和ＮａＯＨ溶液腐蚀可得到几百纳米／分的腐蚀速率．

Abstract A new method of light assisted wet etching of semiconductor nitride GaN has been successfully demonstrated. This etching technique has advantages of simplicity, easy to be controlled as well as small damage. The etching rate of GaN as high as 200￣600nm/min is achieved by illuminating of a 200W mercury lamp in combination with the solution of NaOH. The factor dependence of etch rate is investigated. The mechanism of the etching is discussed.