铝掺杂氧化锌薄膜电学特性的研究

Investigation on Electrical Property of Al-Doped ZnO Thin Films

利用脉冲激光沉积法,在氧气氛下(氧分压为20 Pa)以硅为基体制备了ZnO∶Al透明导电膜.靶材选用(ZnO)1-x(Al2O3)x陶瓷靶,沉积过程中基体温度保持在600℃.通过对膜进行霍尔效应测量及SEM、XRD测试分析,研究了靶材中的化学配比(掺杂比)对膜的电学特性的影响.结果表明:掺杂比影响着膜的电学性能和膜的结晶状况.掺杂铝的质量分数为1.37%时所获得的ZnO薄膜具有最小的电阻率.

Aluminum-doped zinc oxide （AZO） thin films have been deposited on si substrates by pulsed laser depo- sition from ceramic targets, （ZnO） 1-x（ Al2O3 ） x, as source materials in oxygen atmosphere （ 20 Pa of oxygen pressure） and under a substrate temperature of 600 ℃. The electrical properties of various dopant ratio of the films have been analysed through Hall effect,SEM and X-ray diffraction. The results showed effects of Al dopant ratio on electrical property. It was observed that 1.7% of Al content in the film is the optimum doping content that makes the film to achieve the minimum film resisitivity.