摘要
为了降低大直径硅单晶生长过程中所引入的氧、碳杂质含量,提高硅单晶质量,特对18英寸直拉硅单晶炉的热系统进行了改进.实验结果表明,通过改变氩气流向和加热器的尺寸的改进型热系统,可降低了硅单晶中的氧、碳含量,缩短拉制晶体时间,降低消耗功率,提高硅单晶质量.图10,表1,参13.
In order to reduce oxygen and carbon contents in czochralski Si single crystal (CZSi) and to improve its quality, the 18# thermal system of furnace is designed and modified. The results indicate as follows: The improving thermal system by changing the pattern of argon flow and the size of heater thermal stove ean lower contents of oxygen and carbon in CZSi, spend less time in crystal growth process with less energy consumption and better crystal quality, lOfigs., ltab., 13refs.
出处
《湖南科技大学学报(自然科学版)》
CAS
北大核心
2009年第3期103-107,共5页
Journal of Hunan University of Science And Technology:Natural Science Edition
关键词
直拉单晶硅
热系统
氩气流向
加热器
氧、碳含量
CZSi
thermal system
argon flow
heater thermal stove
contents of oxygen and carbon