1.3μm GeSi单波导低功耗电光开关的探索

Investigation on 1.3 μm GeSi single waveguide electro optic switches with low power loss

分析了几次研制结果发现，注入载流子的收集途径、体电阻和发射区的面积是影响单波导电光开关功耗的主要因素。在此基础上，提出了一种Ｓｉ基ＧｅＳｉ单波导低功率电光开关新结构，经估算它的功耗约为３Ｖ×２０ｍＡ，即６０ｍＷ，比现有最好的１０Ｖ×３０ｍＡ，即３００ｍＷ低一个数量级。

Analyzation on research results is made which shows that the way of collecting injected carriers,bulk resistance and the area of emitting region are the main factors affecting the power loss of single waveguide electro-optic switches.In turn,a novel electro-optic switch structure of GeSi/Si single waveguide with low power loss is proposed whose estimated power loss is 3 V×20 mA,or 60 mW,an order of magnitude lower than the best value of 10 V×30 mA,or 300 mW at present.