摘要
分析了当双极晶体管结温分布不均匀时用ΔVBE法测得的温度与器件结温分布以及测量条件的关系,提出了一种快速判断双极晶体管结温分布均匀性的方法.
The relationship between the junction temperature of bipolar transistors and the Apparent temperature which is measured by ΔV BE method is studied. Thus, a new method of judging the junction temperature inhomogeneity of bipolar transistors is provided.
出处
《山东大学学报(自然科学版)》
CSCD
1998年第3期276-281,共6页
Journal of Shandong University(Natural Science Edition)
关键词
双极晶体管
结温分布
ΔVBE法
bipolar transistor
ΔV BE method
distribution of Junction temperature