3D封装中的圆片减薄技术

Wafer Grinding Technology in 3D Package

随着微电子工业迅猛发展,圆片直径越来越大,当150mm、200mm甚至300mm英寸圆片被减薄到150μm以下时,圆片翘曲和边缘损伤问题变得尤为突出。超薄减薄技术是集成电路薄型化发展的关键技术,它直接影响电路的质量和可靠性。文章从超薄圆片减薄中常见的圆片翘曲和边缘损伤造成的损失出发,分析了圆片翘曲和边缘损伤的原因,提出了相应的改善措施。

With the micro-electronic industry rapidly developing, the size of wafer is becoming larger and larger. When wafers in 150mm, 200mm, or even 300mm are grinded to less than 150 μ m, the problem of wafer warping and edge damage becomes very obvious. The ultrathin wafer grinding is the key technology to the thin IC trend, as it directly affects the quality and reliability of IC. This article focuses on the loss caused by the normal defects of wafer warping and edge damage in ultrathin wafer grinding, analyses the defect cause, and introduces relevant measures of improvement.