多孔氧化铝模板中交流沉积钴纳米线阵列

Electrochemical deposition of Co nanowire arrays in porous alumina membrane by alternating current method

利用二次阳极氧化法制备了多孔氧化铝模板(PAM).用交流电化学沉积方法成功地在模板孔道内制备了Co纳米线.采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)对Co纳米线的形貌、晶体结构进行了研究.结果表明,模板的孔径均匀,孔道平直.Co纳米线均匀分布在PAM纳米孔隙中,直径与PAM孔径一致,约50 nm,并沿Co(111)晶面择优生长.

Co nanowire arrays were prepared by alternating current （AC） electrochemical deposition method in anodic aluminum oxide （PAM） templates processed by using step-decreased voltage. The morphology and structure of Co nanowires were characterized by scanning electron microscopy （SEM）and X-ray diffraction （XRD）, respectively. The results indicate that nickel nanowires preferred orientation along （111） had uniform distribution in Co/PAM nano-eomposite thin films and size were about 50 nm in diameter.