A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base

A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base

下载PDF

导出

摘要 In this paper, a new structure of a 4H-SiC bipolar junction transistor （BJT） with a buried layer （BL） in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations. In this paper, a new structure of a 4H-SiC bipolar junction transistor （BJT） with a buried layer （BL） in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.

作者张有润张波李肇基邓小川刘曦麟

机构地区 State Key Laboratory of Electronic Thin Films and Integrated Devices

出处《Chinese Physics B》 SCIE EI CAS CSCD 2009年第9期3995-3999,共5页 中国物理B（英文版）

关键词 4H-SIC bipolar junction transistor （BJT） buried layer current gain 4H-SiC, bipolar junction transistor （BJT）, buried layer, current gain

分类号 TN322.8 [电子电信—物理电子学] TN325.2 [电子电信—物理电子学]

引文网络
相关文献

参考文献18

1Krishnaswami S, Agarwal A, Ryu S H, Capell C, Richmond J, Palmour J, Balachandran S, Chow T P, Bayne S, Geil B, Jones K and Scozzie C 2005 Electron Device Lett. 26 175.
2Balachandran S, Chow T P, Agarwal A, scozzie C and Jones K A 2005 Electron Device Lett. 26 470.
3Ivanov P A, Levinshtein M E, Agarwal A K, Krishnaswami S and Palmour J W 2006 Electron Devices 53 1245.
4Zhang J H, Li X Q, Alexandrov P, Fursin L, Wang X H and Zhao J H 2008 Electron Devices 55 1899.
5Domeij M, Lee H S, Danielsson E, Zetterling C M, Ostling M and Schoner A 2005 Electron Device Lett. 26 743.
6Zhang J, Luo Y, Alexandrov P, Fursin L and Zhao J H 2003 Electron Device Lett. 24 327.
7Huang C F and Cooper J A 2003 Electron Device Lett. 24 396.
8Zhang J H, Li X Q, Alexandrov P, Burke T and Zhao J H 2008 Electron Device Lett. 29 471.
9Deng X C, Zhang B and Li Z J 2007 Semiconductor Science and Technology 22 1339.
10Deng X C, Zhang B, Li Z J and Chen Z L 2007 Semiconductor Science and Technology 22 701.

1张有润,施金飞,刘影,孙成春,郭飞,张波.High current gain 4H-SiC bipolar junction transistor[J].Journal of Semiconductors,2016,37(4):57-60.
2邓永辉,谢刚,汪涛,盛况.A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain[J].Chinese Physics B,2013,22(9):559-563.
3罗小蓉,胡刚毅,周坤,蒋永恒,王沛,王琦,罗尹春,张波,李肇基.High voltage SOI LDMOS with a compound buried layer[J].Journal of Semiconductors,2012,33(10):37-41.
4常玉春,HailinLuo,等.A Novel GaAs／InGaAs／AlGaAs Structure of Modulation—Doped Field—Effect Transistors with High Transconductances[J].Chinese Physics Letters,2002,19(4):588-590.
5伍伟,张波,方健,罗小蓉,李肇基.A high voltage Bi-CMOS compatible buffer super-junction LDMOS with an N-type buried layer[J].Journal of Semiconductors,2014,35(1):65-69. 被引量：1
6罗小蓉,王元刚,邓浩,Florin Udreab.A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer[J].Chinese Physics B,2010,19(7):530-536.
7罗小蓉,李肇基,张波.高散热变k介质埋层SOI高压功率器件[J].Journal of Semiconductors,2006,27(10):1832-1837.
8汤岑,谢刚,张丽,郭清,汪涛,盛况.Electric field modulation technique for high-voltage AlGaN/GaN Schottky barrier diodes[J].Chinese Physics B,2013,22(10):406-411. 被引量：1
9杨永晖,唐昭焕,张正元,刘勇,王志宽,谭开洲,冯志成.A novel structure in reducing the on-resistance of a VDMOS[J].Journal of Semiconductors,2011,32(2):44-47. 被引量：1
10吴丽娟,章文通,张波,李肇基.A high voltage SOI pLDMOS with a partial interface equipotential floating buried layer[J].Journal of Semiconductors,2013,34(7):97-101.

Chinese Physics B

2009年第9期

浏览历史

内容加载中请稍等...

A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base

参考文献18

相关作者

相关机构

相关主题

浏览历史