摘要
This paper obtains the room temperature ferromagnetism in Sn1-x FexO2 films fabricated by the Sol-Gel method. X-ray diffraction results show that Fe doping inhibits the growth of SnO2 and Fe^3＋ ions occupy the Sn sites. The measurement of resistance excludes the free carrier inducing ferromagnetism. Moreover, the temperature dependence of magnetization has been better fitted by the Curie Weiss law and bound magnetic polaron （BMP） theory. An enhancement of ferromagnetism is achieved by annealing the samples with x = 7.1% in H2, and a decrease of oxygen flow rate. All these results prove that the BMP model depending on defects can explain ferromagnetism in diluted magnetic oxides.
This paper obtains the room temperature ferromagnetism in Sn1-x FexO2 films fabricated by the Sol-Gel method. X-ray diffraction results show that Fe doping inhibits the growth of SnO2 and Fe^3＋ ions occupy the Sn sites. The measurement of resistance excludes the free carrier inducing ferromagnetism. Moreover, the temperature dependence of magnetization has been better fitted by the Curie Weiss law and bound magnetic polaron （BMP） theory. An enhancement of ferromagnetism is achieved by annealing the samples with x = 7.1% in H2, and a decrease of oxygen flow rate. All these results prove that the BMP model depending on defects can explain ferromagnetism in diluted magnetic oxides.
